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众所周知,在热氧化时半导体中的杂质分布会有改变,受主杂质硼和镓也不例外.按照文献[1] 给出的公式可以计算热氧化后硼和镓在硅中的浓度分布.所用公式是:
It is well known that the distribution of impurities in semiconductors will change during thermal oxidation and the acceptor boron and gallium are no exception.According to the formula given in [1], the concentration distribution of boron and gallium in silicon after thermal oxidation can be calculated. The formula is: