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In a grating-coupled high-electron-mobility transistor,weak terahertz emission with wavelength around 400μm was observed by using a Fourier-transform spectrometer.The absolute terahertz emission power was extracted from a strong background blackbody emission by using a modulation technique.The power of terahertz emission is proportional to the drain-source current,while the power of blackbody emission has a distinct relation with the electrical power.The dependence on the drain-source bias and the gate voltage suggests that the terahertz emission is induced by accelerated electrons interacting with the grating.
In a grating-coupled high-electron-mobility transistor, weak terahertz emission with wavelength around 400 μm was observed by using a Fourier-transform spectrometer. Absolute temperature of emission body was extracted from a strong background blackbody emission by using a modulation technique. Power of terahertz emission is proportional to the drain-source current, while the power of blackbody emission has a distinct relation with the electrical power. The dependence on the drain-source bias and the gate voltage suggests that the terahertz emission is induced by reduced electron interacting with the grating.