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以AlN作为靶材,使用射频磁控溅射法在Si(100)和玻璃衬底上,在纯氮气气氛条件下制备得到AlN薄膜,并研究了衬底温度对薄膜的结构,形貌和性质的影响.实验表明,衬底温度为370℃的条件下制备的AlN薄膜具有C轴择优取向,薄膜表面均匀、致密和平整,均方根粗糙度为4.83nm.随着基片温度的增加,薄膜的折射率增加,对应着薄膜从非晶态到晶态过程的演变.
Using AlN as target material, AlN thin films were prepared on Si (100) and glass substrates by RF magnetron sputtering in a pure nitrogen atmosphere. The effects of substrate temperature on the structure, morphology and properties of the films The results show that the AlN film prepared at 370 ℃ has a preferred orientation of C axis, the film surface is uniform, dense and smooth, the root mean square roughness is 4.83nm.With the increase of the substrate temperature, The refractive index of the film increases, corresponding to the evolution of the film from the amorphous state to the crystalline state.