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以解析热分析理论为基础,建立了平板Nd:GdVO_4晶体在激光二极管阵列双侧抽运时的导热微分方程。通过方程求解,得到平板Nd:GdVO_4晶体内部温度场分布的解析式和热形变分布。温度场和热形变场的数值模拟表明,当抽运光平均功率为10 W,抽运区域为1 mm×1 mm时,4组激光二极管阵列光源在3处不同位置的一维温度场、二维温度场分布和热形变量有很大差异;3处抽运光源位置所产生的温度分布和热形变量对比,得到了抽运光源在位置1,2处所产生的温升和热形变量相对较小,位置3处最大。
Based on the analysis of thermal analysis theory, the differential thermal conduction equation of flat Nd: GdVO_4 crystal on both sides of the laser diode array is established. By solving the equations, the analytical and thermal deformation distributions of the internal temperature field distribution of Nd: GdVO_4 crystal were obtained. Numerical simulation of temperature field and thermal deformation field shows that when the average power of pumping light is 10 W and the pumping area is 1 mm × 1 mm, the one-dimensional temperature field of four laser diode array light sources at three different positions, Dimensional temperature field distribution and thermal deformation variables are very different; the temperature distribution and thermal deformation caused by the location of the pumping light source 3 is compared, the relative temperature rise and thermal deformation of the pumping light source at positions 1 and 2 are obtained Smaller, the largest at 3 locations.