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一、前言 在调试LC-2机器时,发现所引出的二氟化磷离子流[(PF_2)~+]较磷离子流大好几倍。为提高工作效率,开展了二氟化磷离子掺杂工艺可能性的探索。通过系统测量退火特性,方块电阻与注入剂量的关系,结深与注入能量的关系,注入层载流子的剖面分布,注入层的平均迁移率参数以及与掺磷对比制管实验等大量的实验都表明:(PF_2)~+作为n型注入杂质是可行的。某些参数,例如n~+-p结的反向漏电比
I. Introduction When debugging the LC-2 machine, it was found that the resulting flow of the difluoride difluoride ion [(PF_2) ~ +] was several times better than that of the phosphorus ion flux. In order to improve the working efficiency, the possibility of phosphorus (II) fluoride doping process has been explored. The relationship between annealing resistance and implantation dose, the relationship between junction depth and implantation energy, the cross-sectional distribution of carrier injection layer, the average mobility parameter of injection layer, All show that: (PF_2) ~ + as n-type impurities is feasible. Some parameters, such as n ~ + -p junction reverse leakage ratio