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据报导,日本三棱电机的大规模集成电路研究所已成功地开发了低压 MCCVD 批量生产20(?)厚度外延薄膜的方法。将反应室保持在较低的气压之下,气流快速而均匀地流过,以制出高质量的外延膜。在迅速地应用到制做 GaAs 太阳电池之后,这一技术也将
It has been reported that Japan’s Sansei Electric LSI Institute has successfully developed a low-pressure MCCVD mass production of 20 (?) Thickness of the epitaxial film. Maintaining the reaction chamber below the lower gas pressure allows the gas flow to flow rapidly and evenly to produce a high quality epitaxial film. This technology will also be applied after the rapid application of GaAs solar cells