以Cu膜为例, 用Monte Carlo算法模拟了薄膜生长的随机过程. 找到了生长过程中的三个优化温度, 并研究了它们的渐近一致性, 同时对各种温度区间内表面粗糙度、相对密度随入射率的变化规律进行深入的探讨. 模拟中考虑了一些新的效应, 如原子迁移过程中势能的变化, 以及原子扩散引起的连带效应, 从而使模拟更加合理. 模型中采用了冻结周围原子近似和周期性边界条件处理. Taking Cu film as an example, the Monte Carlo algorithm was used to simulate the random process of film growth.The three optimal temperatures in the growth process were found, and their asymptotic consistency was also studied. At the same time, the surface roughness, Relative density changes with the incidence of in-depth discussion of the simulation to consider some new effects, such as the process of atom migration potential energy changes, as well as the associated effects caused by atomic diffusion, so that the simulation is more reasonable. The model used to freeze Around the atomic approximation and periodic boundary conditions.