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采用InP基InAlGaAs多量子阱激光器外延材料结构,利用感应耦合等离子体(ICP)干法刻蚀技术和聚酰亚胺介质平坦化工艺,研制了多量子阱半导体环形激光器样品.该器件通过加正偏压的环形结构谐振腔实现光激射,然后借助紧邻的直线波导耦合将光信号输出.环形谐振腔直径为700μm,波导宽度为3μm.用光纤对准直线波导端口耦合测试了环形激光器的光功率-电流特性曲线和激射光谱,其阈值电流为120mA,在注入电流160mA时从直波导耦合输出得到激射光谱的中心波长为1602nm,并结合光功率-电流特性曲线对环形激光器中的工作模式进行了初步分析.
A multi-quantum well semiconductor ring laser was fabricated by InP-based InAlGaAs multiple quantum well laser epitaxial material structure and by inductively coupled plasma (ICP) dry etching and polyimide dielectric planarization. The biased ring resonator was photoexcited and the optical signal was then coupled by means of an adjacent linear waveguide with a ring resonator diameter of 700 μm and a waveguide width of 3 μm.The ring laser was tested for optical coupling Power-current characteristic curve and lasing spectrum, the threshold current is 120mA, the central wavelength of the laser emission spectrum is 1602nm when the injection current is 160mA from the direct-wave waveguide output, and combined with the optical power-current characteristics of the ring laser Model for a preliminary analysis.