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相场方法已被发掘出用于直接求解含时的自由边界问题—著名的斯特藩方程。该方法作为晶体生长过程中模拟复杂图形成因的计算工具 ,已呈现出强有力的生命力。目前的研究在于努力发展精巧的计算技术 ,以便对于晶体生长和金属凝固过程进行理论模拟 ,而这些技术将有可能广泛地应用于工业流程。相场方法之所以具有吸引力 ,基于如下事实 :在计算机模拟过程中 ,既可避免对于边界的实时追踪 ,又不需要反复判别是否满足显式边界条件。在过去的 10年中 ,它已逐步被用于研究晶体生长的基础课题。诸如 :热质输运、晶体生长动力学、二维和三维枝晶生长、图形选择、生长形态和显微结构等。本文对相场方法进行评述 ,同时给出其最新应用结果。
Phase-field methods have been exploited to solve directly the time-bound free boundary problem - the famous Stefan equation. As a computational tool to simulate the formation of complex patterns during crystal growth, this method has shown strong vitality. The current research is to develop elaborate computational techniques to theoretically simulate crystal growth and metal solidification processes that are likely to be widely used in industrial processes. The attractiveness of the phase-field approach is based on the fact that in computer simulations, it is possible to avoid real-time tracking of the boundaries without having to repeatedly determine whether the explicit boundary conditions are satisfied. In the past 10 years, it has been gradually used to study the basic topics of crystal growth. Such as: thermal transport, crystal growth kinetics, two-dimensional and three-dimensional dendritic growth, graphics selection, growth morphology and microstructure. This article reviews the phase field method and gives the latest application results.