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在GaAs(110)衬底上生长的半导体材料有诸多优良性能,使得在非极性GaAs(110)衬底上获得高质量各类异质结材料,成为近年来分子束外延生长关注的课题.考虑GaAs(110)表面是Ga和As共面,最佳生长温度窗口很小;反射式高能电子衍射的(1×1)再构图案对生长温度和V/Ⅲ束流比不敏感,难于通过观察再构图案的变化,准确地找到最佳生长条件.作者在制备GaAs(110)量子阱过程中,观察到反射式高能电子衍射强度振荡呈现出的单双周期变化.这意味着不同工艺条件下,在GaAs(110)衬底上量子阱有单层和双层两种生长模式.透射电子显微镜和室温光致荧光光谱测量结果表明:在双层生长模式下量子阱样品光学性能较差,而在单层生长模式下量子阱光学性能较好,但是界面会变粗糙.利用这一特点,我们采用反射式高能电子衍射强度振荡技术,找到了一种在GaAs(110)衬底上生长高质量量子阱的可行方法.
The semiconductor materials grown on GaAs (110) substrates have many excellent properties, which make high quality heterojunction materials available on non-polar GaAs (110) substrates become the focus of molecular beam epitaxy growth in recent years. Considering that the surface of GaAs (110) is Ga and As coplanar, the optimum growth temperature window is very small. The (1 × 1) reconstruction pattern of reflective high energy electron diffraction is not sensitive to the growth temperature and V / Ⅲ beam current, Observing the change of the reconstructed pattern and finding the optimal growth conditions accurately, we found that during the process of preparing the GaAs (110) quantum well, single and double cycle changes of the intensity oscillation of the reflection high energy electron diffraction were observed, which implied that different process conditions , Quantum wells have single and double growth modes on GaAs (110) substrate.Transmission electron microscopy and room-temperature photoluminescence spectroscopy measurements show that the quantum well has a poor optical performance in double-layer growth mode, However, in the single-layer growth mode, the optical properties of the quantum well are better, but the interface will be roughened.Using this characteristic, we have found a high growth on GaAs (110) substrate by using the reflection-type high energy electron diffraction Feasible quantum wells Law.