一、前言电子束曝光机制作的高精度分离掩模版,精度高。要检查一套版之间的相对套准精度,往往比较困难。若用掩模版比较仪测量,只能测量相对精度,且精度较低,要测到±0.5μm的相对误差,已属不易。采用光刻工艺来检验掩模版的相对套准精度,尽管和器件生产工艺相容好,但测试周期长;而且由于光刻、腐蚀等工艺过程要带来相当可观的精度损失。因此作为一种工艺考核是可以的,而作为掩模版的套准精度就不合适了。 I. Introduction Electron beam exposure machine made of high-precision separation of the reticle, high precision. To check the relative registration accuracy between sets, it is often more difficult. If using the mask comparator to measure, can only measure the relative accuracy, and the accuracy is low, to measure the relative error of ± 0.5μm, is not easy. The photolithography process used to test the relative registration accuracy of the reticle, although the production process compatible with the device, but the test cycle is long; and due to lithography, corrosion and other processes to bring considerable loss of accuracy. Therefore, as a process assessment is possible, and as a reticle registration accuracy is not appropriate.