Ga N基白光LED不断向高功率、高性能和长寿命方向发展,Ga N基白光LED的热性能成为在使用中的重要参数。采用瞬态热测量方式,对工作在不同的温度和驱动电流的Ga N基发光二极管的热性能进行了研究。通过比较光、电特性发现LED芯片对器件热阻影响很小,但同时管芯附着层对LED器件的热特性起着非常重要的作用。此外,热电阻随着电流和环境温度的升高而增加,主要归因于管芯附着层声子或粒子的平均自由程减小。 Ga N-based white LED continue to high-power, high performance and long life direction, Ga N white LED thermal performance become an important parameter in use. The thermal performance of GaN-based light-emitting diodes operating at different temperatures and driving currents was investigated using transient thermal measurements. By comparing the light and the electrical characteristics, it is found that the LED chip has little effect on the thermal resistance of the device, but at the same time, the die attach layer plays a very important role on the thermal characteristics of the LED device. In addition, the thermal resistance increases with current and ambient temperature, mainly due to the decrease in the mean free path of phonons or particles in the die attach layer.