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本文扼要地叙述了近年来硅(锂)X射线荧光谱仪的进展,X射线荧光谱仪对半导体探测器的要求,和对探测器几何形状的选择。文章详细地介绍了硅(锂)X射线探测器的制备工艺,及用该工艺流程制备的灵敏面积为12毫米~2、厚度3.5毫米的探测器,在温度～77°k时给出电容<1微微法,而反向电流,一直到1000伏的反向偏压下仍～10~(-13)安。配上脉冲光反馈前置放大器后,电子学系统的噪声FWHM(简称半宽度)为249电子伏的情况下,对~(55)Fe的5.9千电子伏的谱线得到半宽度为291电子伏。最后对上述结果简单地给予讨论。
This article briefly describes the progress of silicon (lithium) X-ray fluorescence spectrometers in recent years, the requirements of X-ray fluorescence spectrometers for semiconductor detectors, and the choice of detector geometry. In this paper, the preparation technology of silicon (lithium) X-ray detector is described in detail, and the detector with the sensitive area of 12mm ~ 2 and the thickness of 3.5mm prepared by this process is given. When the temperature is ~ 77 ° K, 1 pico-law, while the reverse current is still ~ 10 ~ (-13) A under the reverse bias of 1000 volts. Coupled with pulsed light feedback preamplifier, the electronic system noise FWHM (referred to as half-width) of 249 electron volts, the ~ (55) Fe 5.9 eV spectral line to obtain a half width of 291 electron volts . Finally, the above results are briefly discussed.