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Transient transport of electrons in ZnS-type thin film electroluminescent devices is studied with Monte Carlo method. The variation rule of electrons’ average kinetic energy, average drift velocity and intervalley transfer process are obtained. The transient time and drift length before the balance of acceleration and scattering are about 200 fs and 30-40 nm, respectively. Field emission process of electrons trapped at interface states only affects the transient process of electron transport and makes no influence on the steady state. The new explanations about the “dead layer” phenomenon and the overshoot in the average drift velocity are proposed based on the calculation results.
Transient transport of electrons in ZnS-type thin film electroluminescent devices is studied with Monte Carlo method. The variation rule of electrons’ average kinetic energy, average drift velocity and intervalley transfer process are obtained. The transient time and drift length before the balance of acceleration and scattering are about 200 fs and 30-40 nm, respectively. Field emission process of electron trapped at interface states only affects the transient process of electron transport and makes no influence on the steady state. The new explanations about the “dead layer ”phenomenon and the overshoot in the average drift velocity are proposed based on the calculation results."