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Chromium oxide films were deposited on Si(100) substrates by medium-frequency(MF) unbalanced magnetron sputtering at different target-substrate distances DTS(60,100,120 mm) and sputtering power(2.8,5.6,11.2 kW),respectively.The structure,surface morphologies,and microhardness of the chromium oxide films were examined by X-ray diffraction(XRD),atomic force microscopy(AFM),and microhardness tester.The results indicate that elevated MF sputtering power can improve the crystallization of the films;The DTS value affects the structure of the films by changing the preferential orientation from CrO3(221) to Cr2O3(116);The microhardness of the chromium oxide films is found to increase with the sputtering power.For preparing the Cr2O3-dominated films with comparatively high-performance,the optimized condition is the target-substrate distance of 100 mm and MF sputtering power of 11.2 kW.
Chromium oxide films were deposited on Si (100) substrates by medium-frequency (MF) unbalanced magnetron sputtering at different target-substrate distances DTS (60,100,120 mm) and sputtering power (2.8,5.6,11.2 kW) morphologies, and microhardness of the chromium oxide films were examined by X-ray diffraction (XRD), atomic force microscopy (AFM), and microhardness tester. the results that elevated MF sputtering power can improve the crystallization of the films; The DTS value The structure of the films by changing the preferential orientation from CrO3 (221) to Cr2O3 (116); The microhardness of the chromium oxide films is found to increase with the sputtering power. For preparing the Cr2O3-dominated films with comparatively high-performance , the optimized condition is the target-substrate distance of 100 mm and the MF sputtering power of 11.2 kW.