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采用电子束蒸发Pt和后快速热退火的方法,研究了退火条件对Pt纳米晶的生长特性的影响,结果显示Pt纳米晶的密度随退火温度的升高和退火时间的延长均表现出先增大后减小的趋势.在800℃下退火20s能得到分布均匀的、密度为3·0×1011cm-2的Pt纳米晶.进一步研究了基于Al2O3/Pt纳米晶/HfO2叠层的MOS电容结构的存储效应,表明其在-3—+8V扫描电压范围下C-V滞回窗口达到2·01V.在编程时间相同的情况下,当编程电压增大到9V时其平带电压偏移显著增大,这与电子穿过隧穿层的势垒减小有关,即电子由直接隧穿变为Fowler-Nordheim隧穿.此外,Pt纳米晶存储电容也表现出了随编程时间持续的电子俘获能力.
The effects of annealing conditions on the growth characteristics of Pt nanocrystals were investigated by electron beam evaporation of Pt and rapid thermal annealing. The results showed that the density of Pt nanocrystals increased firstly with the increase of annealing temperature and annealing time After annealing at 800 ℃ for 20s, a uniform distribution of Pt nanocrystals with a density of 3.0 × 1011cm-2 can be obtained.Further studies on the structure of the MOS capacitor based on the Al2O3 / Pt nanocrystal / HfO2 stack The memory effect shows that the CV hysteresis window reaches 2.01 V at the -3 - +8 V scan voltage range. With the same programming time, the flatband voltage offset increases significantly when the programming voltage is increased to 9V, This is related to the decrease of the barrier of electrons passing through the tunneling layer, ie, the tunneling of electrons by direct tunneling to Fowler-Nordheim tunneling. In addition, the Pt nanocrystal storage capacitor also exhibits sustained electron trapping with programming time.