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本文以ＨｇＴｅ－ＣｄＴｅ伪二元相图为基础，分析了Ｈｇ＿（１－ｘ）Ｃｄ＿ｘＴｅ单晶生长过程中分凝特性及扩散规律。从维持平面生长界面的角度出发，确定了不同温度梯度下生长速度选择的上限，并从获得成分均匀晶体的角度出发讨论了晶体生长速度下限的选择条件。
Based on the pseudo-binary phase diagram of HgTe-CdTe, the segregation characteristics and diffusion rules during the growth of Hg_ (1-x) Cd_xTe single crystal were analyzed. From the perspective of maintaining the plane growth interface, the upper limit of the growth rate selection under different temperature gradients was determined, and the selection condition of the lower limit of crystal growth rate was discussed from the point of obtaining uniform crystals.