BiCMOS是继CMOS后的新一代高性能VLSI工艺。CMOS以低功耗、高密度成为80年代VLSI的主流工艺。随着尺寸的逐步缩小,电路性能不断得到改进,但是当尺寸降到1μm以下时,由于载流子速度饱和等原因,它的潜力受到很大的限制。 把CMOS和Bipolar集成在同一芯片上,发挥各自的优点,克服缺点,可以使电路达到高速度、低功耗。 BiCMOS is the next generation high-performance VLSI process following CMOS. CMOS low-power, high-density VLSI 80’s become the mainstream technology. As the size shrinks, the circuit performance continues to improve, but its potential is severely limited by the fact that the carrier speed is saturated when the size drops below 1 μm. The CMOS and Bipolar integrated in the same chip, to play their own advantages, overcome shortcomings, can make the circuit to achieve high speed, low power consumption.