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本文对金球C—V技术用文献中所介绍的(d~2V_(FB))/(dx~2)测量Sio_2中电荷分布时的适用范围进行了研究.在我们的实验中指出(1)当Sio_2厚度在200—300A范围时,测量数据处理要特别慎重(2)当Sio_2厚度小于750A时,只要V_(FB)仍是负值,V_(FB)的测量值是不可靠的。
In this paper, we study the application range of (d ~ 2V_ (FB)) / (dx ~ 2) for the charge distribution in Sio_2 introduced by the Golden Ball C-V technique. Measurements should be handled with care when Sio_2 is in the 200-300 A range. (2) V_ (FB) measurements are not reliable as long as V_ (FB) is still negative when Sio_2 is less than 750A.