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报道了一种基于负电阻温度系数的多晶硅电阻电热激励/压阻检测SiO 2/Si3N4/SixNy微桥谐振器的新型红外探测器.微桥谐振器吸收的红外辐射引起微桥温度升高,激励电阻和检测电桥的阻值减小,使得恒定激励电压作用下激励电阻的静态功率和惠斯登电桥的焦耳热增加,等效于增加了辐射在微桥谐振器上的红外辐射.初步的实验证实了该方案的可行性.
A new type of infrared detector based on polysilicon resistance electrothermal excitation / piezoresistive detection SiO 2 / Si 3 N 4 / SixNy micro-bridge resonators based on the negative temperature coefficient of resistance is reported.The infrared radiation absorbed by the micro-bridge resonators causes the micro-bridge temperature to rise, The resistance of the resistor and detection bridge is reduced so that the static power of the excitation resistance and the Joule heat of the Wheatstone bridge are increased by the constant excitation voltage, which is equivalent to increasing the infrared radiation radiated on the micro-bridge resonator. The experiment confirmed the feasibility of the program.