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A lateral photovoltaic effect(LPE) is discovered in an La TiO_(3+δ)film epitaxially grown on a(100) Sr TiO_3 substrate. Under the illumination of a continuous 808 nm laser beam that is focused on the La TiO_(3+δ)film through the Sr TO3 substrate, the open-circuit photovoltage depends linearly on the illuminated position. The sensitivity of the LPE can be modified by the bias current. The La TiO_(3+δ)film shows a stable photoelectric property under the high pressure, up to 9 MPa. These results indicate that the La TiO_(3+δ)films can give rise to a potentially photoelectronic device for near-infrared position-sensitive detection in high-pressure environments.
Under the illumination of a continuous 808 nm laser beam that is focused on the La TiO_ (3+ δ) film epitaxially grown on a (100) Sr TiO 3 substrate. δ) film through the Sr TO3 substrate, the open-circuit photovoltage depends linearly on the illuminated position. The sensitivity of the LPE can be modified by the bias current. The La TiO_ (3 + δ) These results indicate that the La TiO_ (3 + δ) films can give rise to a potentially photoelectronic device for near-infrared position-sensitive detection in high-pressure environments.