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对ＡＩＢｒ３－ＮＨ３Ｎ２体系化学气相淀积法合成ＡＩＮ膜进行了热力学分析和工艺设计，研究了在不同淀积温度和体系总压时，体系中主要气态物种的平衡分压和ＡＩＮ膜的理论淀积速率与源温和载气流量的关系，并与微波等离子体化学气相淀积ＡＩＮ膜的实验结果进行了比较．
Thermodynamic analysis and process design of AIN film synthesized by chemical vapor deposition in AIBr3-NH3N2 system were carried out. The equilibrium partial pressures of main gaseous species and the theoretical deposition of AIN film at different deposition temperature and system total pressure And the relationship between the carrier gas flow rate and the source carrier gas flow rate were compared with the experimental results of microwave plasma CVD AIN film.