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理论研究了铁磁/有机半导体肖特基接触时的电流自旋极化注入,并讨论了电流自旋极化率随界面处肖特基势垒高度、有机半导体层中特殊载流子及其迁移率、界面附近掺杂浓度的变化关系.通过计算发现,寻找在势垒区中载流子迁移率比较大的有机半导体材料对实现有效的自旋注入是必要的;同时还发现,由于铁磁/有机半导体接触而形成的肖特基势垒不利于自旋注入.因此要想实现有效的自旋注入,界面附近必须采用重掺杂来有效减少势垒区的宽度,且势垒的高度要限制在一定的范围内.
The current spin polarization implantation of ferromagnetic / organic semiconductor Schottky contacts has been theoretically studied. The dependence of the current spin polarizability with the Schottky barrier height at the interface, the specific carriers in the organic semiconductor layer and their Mobility and interfacial doping concentration.The results show that it is necessary to find organic semiconductor materials with relatively high carrier mobility in the barrier region to realize effective spin injection.At the same time, The Schottky barrier formed by the magnetic / organic semiconductor contact is not conducive to spin injection, so in order to achieve effective spin injection, heavy doping must be applied in the vicinity of the interface to effectively reduce the width of the barrier region, and the height of the barrier To be limited to a certain extent.