论文部分内容阅读
利用磁控溅射方法改变衬底温度,制备了一系列NiO:Cu/ZnO异质pn结。实验结果表明,当衬底温度从室温升高到300℃时,NiO:Cu/ZnO异质pn结的整流特性明显得到改善;与此同时,NiO:Cu/ZnO异质pn结的光学透过率也从40%增大到80%。这可能是由于NiO:Cu薄膜结晶质量改善,薄膜内缺陷减少所致。继续增加衬底温度至400℃,异质结的整流特性有所削弱,这可能是由于生长在异质结下层的NiO:Cu薄膜影响了其上ZnO薄膜的生长,进而影响到异质结的整流特性。这一结论,得到X射线衍射(XRD)、原子力显微镜(AFM)和紫外(UV)谱测试结果的支持。
A series of NiO: Cu / ZnO heterogeneous pn junctions were prepared by magnetron sputtering to change the substrate temperature. The experimental results show that the rectification properties of NiO: Cu / ZnO heterojunction pn junction are obviously improved when the substrate temperature increases from room temperature to 300 ℃. Meanwhile, the optical transparency of NiO: Cu / ZnO heterojunction pn junction The pass rate also increased from 40% to 80%. This may be due to the improved quality of the NiO: Cu film and the reduction of defects in the film. Continue to increase the substrate temperature to 400 ℃, the heterojunction rectification characteristics weakened, which may be due to growth in the heterojunction NiO: Cu film under the influence of the growth of the ZnO film thereon, thereby affecting the heterojunction Rectifier characteristics. This conclusion is supported by the results of X-ray diffraction (XRD), atomic force microscopy (AFM) and ultraviolet (UV) spectroscopy.