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V-MOS结构这是一种特殊的MOS配置,其晶体管电流对于衬底而言“垂直”地流动,而不象基本的MOS结构那样“平行”流动。下图所示就是一种VMOS结构。在N~+型衬底上沉积N~-型外延层,然后扩散P型区。在P~-型层上第二次扩散形成N~+型区,在这整个夹层结构上刻蚀出V形沟槽,其深度几乎达到作为晶体管漏端的N~+型衬底。沟槽内面复盖以二氧化硅,然后在上面蒸铝形成栅极。沉积的源接触跨越结构表面上的P~-区和N~+区。
V-MOS Structure This is a special MOS configuration where the transistor current flows “vertically” with respect to the substrate and does not “flow” parallel as the underlying MOS structure does. The figure below shows a VMOS structure. The N ~ - type epitaxial layer is deposited on the N ~ + type substrate, and then the P type region is diffused. The N ~ + -type region was diffused for the second time on the P ~ - -type layer. V-shaped trenches were etched through the entire interlayer structure to almost the same depth as the N ~ + -type substrate at the drain of the transistor. The inner surface of the trench is covered with silicon dioxide, and then the aluminum is evaporated to form the gate. The deposited source contacts across P ~ - and N ~ + regions on the surface of the structure.