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制作了底栅极顶接触有机薄膜晶体管器件,60 nm的pentacene被用作有源层,120 nm热生长的SiO2作为栅极绝缘层.通过采用不同自组装修饰材料对器件的有源层与栅极绝缘层之间的界面进行修饰,如octadecyltrichlorosilane(OTS),phenyltrimethoxysilane(PhTMS),来比较界面修饰层对器件性能的影响.同时对带有PhTMS修饰层的OTFTs器件低栅极电压调制下的场效应行为及其载流子的传输机理进行研究.结果得到,当|VGS|<0.1 V时,载流子在如此小的栅极电压调制下已经不能过多在半导体有源层与栅极绝缘层之间的界面处积聚,使OTFTs器件的输出电流保持相对的平衡.但是,器件的调制栅压在-0.001V时,器件仍然有好的输出特性,当VDS为-20 V时,器件的场效应迁移率为3.22×10-3cm2/Vs,开关电流比为1.43×102,阈值电压为0.66 V.
A bottom gate top contact organic thin film transistor device was fabricated, 60nm pentacene was used as the active layer, 120nm thermally grown SiO2 as the gate insulating layer.Through the use of different self-assembly modification materials on the device active layer and gate (OTS) and phenyltrimethoxysilane (PhTMS) were used to compare the effect of interfacial interfacial modification on the performance of the device.At the same time, the field effect of low gate voltage modulation of OTFTs with PhTMS modification layer Behavior and transport mechanism of carriers.As a result, when | VGS | <0.1 V, carriers can not be too much under such a small gate voltage modulation in the semiconductor active layer and the gate insulating layer However, the device's modulation gate voltage at -0.001V, the device still has good output characteristics, when the VDS is -20 V, the device's field The effect mobility is 3.22 × 10-3cm2 / Vs, the switching current ratio is 1.43 × 102, and the threshold voltage is 0.66V.