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适用于高压线集成电路的一种新的横向晶体管——自对准双扩散横向(SADDL)晶体管已经开发出来。这种管子具有一个自对准形成的窄的n型基区,以提供高的h_(FE)和高的f_T;还有一个可减小电场、提供高的击穿电压BV_(ceo)的P~-型集电极。业已证明,SADDL晶体管的f_T在不降低BV_(ceo)的情况下可以得到改进,f_T值比已经报道过的其它横向晶体管的高十倍以上。制造出的350V档SADDL晶体管,具有高的h_(FE)(约100)、高的f_T(约15MHz)和高的阿莱电压(>1000V)。
A new lateral transistor-self-aligned double-diffused-lateral (SADDL) transistor for high-voltage line integrated circuits has been developed. Such a tube has a self-aligned, narrow n-type base region to provide high h FE and high f T, and a p which reduces the electric field and provides a high breakdown voltage BV ceo ~ - type collector. It has been demonstrated that the f_T of an SADDL transistor can be improved without degrading the BV_ (ceo) value, which is more than ten times higher than other lateral transistors that have been reported. The fabricated 350V SADDL transistor has a high h FE (about 100), a high f T (about 15 MHz) and a high ala voltage (> 1000V).