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本文利用射频磁控溅射工艺制备了ＳｉＣＮ薄膜，研究了基本工艺参数如溅射功率、Ｎ分压对薄膜沉积和光学性能的影响．研究结果表明：溅射制备的薄膜中形成了复杂的网络结构，膜中三元素Ｓｉ、Ｃ和Ｎ两两之间形成了共价键．Ｎ分压的提高降低了薄膜的沉积速率．Ｎ流量的提高使光学带隙增大．溅射功率的提高使薄膜的沉积速率提高，但使得光学带隙减小．
In this paper, RF magnetron sputtering process SiCN film was prepared, the basic process parameters such as sputtering power, N partial pressure on the film deposition and optical properties. The results show that a complex network structure is formed in the films prepared by sputtering. The covalent bonds between the three elements Si, C and N are formed in the films. Increasing the N partial pressure reduces the deposition rate of the film. The increase of N traffic increases the optical bandgap. The increase in sputtering power increases the deposition rate of the film, but decreases the optical bandgap.