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本文利用PCVD方法制得了SnO_2导电薄膜,分析了其电学性能与沉积参数的关系,同时测得该膜具有负温阻特性,这种薄膜是n型半导体膜。在不同温度和不同NOx气体浓度下,对该膜进行了NOx气敏特性的测试。发现在常温下,SnO_2薄膜对NOx,具有较高的灵敏度,响应时间快的特性。
In this paper, the conductive film of SnO_2 was prepared by PCVD method. The relationship between the electrical properties and the deposition parameters was analyzed. The negative temperature resistance of the film was also measured. The film is an n-type semiconductor film. The films were tested for NOx gas sensitivity at different temperatures and different NOx gas concentrations. It is found that SnO 2 film has high sensitivity and fast response time to NOx at room temperature.