本文介绍一种芯片上带有信号调节功能的硅压力传感器。制作时,在标准的3μmCMDS工艺过程中加入了微机械加工工艺,利用带电化学阻蚀剂的各向异性腐蚀技术,在(100)取向硅片上进行腐蚀。控制膜片厚度,使厚度容差小于0.5μm。在同一膜片上,集成了完整的CMDS测量电路。带压阻元件的惠氏电桥的输出信号由一个仪器放大器放大。该放大器的放大率和温度有关,以便补偿灵敏度随温度的变化。另外,灵敏度本身的变化、偏置和偏置随温度的变化亦予以补偿。芯片还具备微调功能,以便在-40～+125℃范围内对所述各参数进行调节。 This article describes a chip with a signal conditioning function of the silicon pressure sensor. During fabrication, a micromachining process was added to a standard 3 μm CMDS process and etching was performed on (100) oriented silicon using an anisotropic etching technique with a charged chemical inhibitor. Diaphragm thickness control, so that the thickness tolerance of less than 0.5μm. On the same diaphragm, integrated CMDS measurement circuit. The output signal of the Wyeth bridge with piezoresistive elements is amplified by an instrumentation amplifier. The amplification of this amplifier is temperature-dependent in order to compensate for changes in sensitivity with temperature. In addition, changes in sensitivity itself, bias and bias with the temperature changes are also to be compensated. The chip also features fine tuning to adjust the parameters in the -40 to + 125 ° C range.