用直流反应磁控溅射法在硅衬底上沉积 C轴择优取向的 Zn O晶体薄膜 ,薄膜呈柱状结构 ,柱状晶直径约为10 0 nm,晶柱内为结晶性能完整的单晶 ,而晶界处存在较大的应力 .Zn O薄膜在 He- Cd激光器激发下有较强的紫外光发射 ,晶界应力引起 Zn O禁带宽度向长波方向移动 ,提高衬底温度有利于降低晶界应力和抑制深能级的绿光发射 . The C-axis preferred orientation Zn O thin films were deposited on silicon substrate by DC reactive magnetron sputtering. The films were columnar in shape with a diameter of about 10 0 nm. The inside of the crystal was a single crystal with complete crystallinity. There is a large stress in the grain boundary.Zn O thin film excited by He-Cd laser has a strong ultraviolet light emission, grain boundary stress causes Zn O forbidden band width to the longwave direction, increasing the substrate temperature is conducive to reduce the grain boundary Stress and inhibit the deep level of green emission.