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制备了GaN基绿光发光二极管.利用耦合法求解了在自发极化和压电极化效应影响下的GaN/InGaN量子阱的极化电场强度.考虑载流子在量子阱间的不均匀分布,模拟计算了系统的一维薛定谔方程、稳态速率方程和泊松方程,得到了载流子在各个阱间的分布比值和辐射复合速率.同时还得到了不同电流下电致发光(EL)谱的峰值波长、谱峰半高宽及EL谱强度的变化情况.发现当测试电流由10mA增加到70mA时,理论结果与实验结果能很好符合.
A GaN-based green light-emitting diode was fabricated. The polarization electric field of the GaN / InGaN quantum well under spontaneous polarization and piezoelectric polarization effects was solved by the coupling method. Considering the uneven distribution of carriers in the quantum wells The one-dimensional Schrödinger equation, steady-state velocity equation and Poisson’s equation of the system were simulated and the carrier distribution ratios and radiation recombination rates were obtained, and the electroluminescence (EL) spectra under different currents , And the change of the full-width at half maximum (FWHM) and the intensity of the EL spectrum, the theoretical results agree well with the experimental results when the test current is increased from 10mA to 70mA.