论文部分内容阅读
通过实验证明了汽相生长的硅外延层中,经Sirtl浸蚀剂浸蚀后,所呈现出的雾状微缺陷,是由铜、铁、镍、钠、磨料等杂质沾污所致;验明了“渍圈”区是与重沾污区相对应的,在轻沾污区内,被显示出的微缺陷呈浅三角坑,而在重沾污区中,除此类浅坑外还常伴有突起的小丘,亮区内无明显可见的微缺陷结构。 在汽相生长的硅外延层中,被Sirtl浸蚀剂浸蚀后,易出现雾状表面,这种表面状态多是由浅三角坑组成的,对此国内外均已报导过。这些微缺陷,常是造成器件低击穿、漏电大和成品率低的重要原因。有的作者只在(100)面上发现了这类浅坑,并且强调是因装片时不锈钢镊子沾污所致。为提高外延片质量与器件成品率,有必要弄清此类缺陷的成因与外延时可能接触的其它杂质的关系,以便有针对性的将其消除。本文的主要目的,是找出雾状微缺陷的形成与若干杂质沾污情况的对应关系,以及观察不同程度沾污区域的微缺陷形貌,期望以此能做为判别外延层内在质量的有益参考。
Experiments show that the vapor-grown silicon epitaxial layer, after etching by Sirtl etchants, presents a micro-defect, which is caused by impurities such as copper, iron, nickel, sodium and abrasives. It is clear that the “circle of stains” area corresponds to the heavily contaminated area. In the lightly contaminated area, the microdefects shown are shallow triangular pits. In heavily contaminated areas, in addition to these shallow pits, Prominent hillocks with no visible microdefects in the bright area. In the vapor grown silicon epitaxial layer, after etching by Sirtl etchant, it is easy to appear the misty surface. This kind of surface state mostly consists of shallow triangular pits, which have been reported both at home and abroad. These microdefects, often caused by the device low breakdown, large leakage and low yield an important reason. Some authors have found such shallow pits only on the (100) face, emphasizing the contamination of the stainless steel tweezers during loading. In order to improve the quality of epitaxial wafers and device yield, it is necessary to understand the relationship between the cause of such defects and other impurities that may be exposed during epitaxy so as to eliminate them in a targeted manner. The main purpose of this paper is to find the corresponding relationship between the formation of micro-defects and the contamination of some impurities, and to observe the micro-defects in the contaminated areas in different degrees. It is expected that this method can be used to judge the intrinsic quality of the epitaxial layer reference.