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本文介绍采用APCVD方法制备了掺硼厚多晶硅膜,研究了影响掺硼多晶层的因素及其电阻率的分布,得到一组电阻率或淀积速率与温度、流量以及随位置参量x变化的关系曲线。
In this paper, the boron-doped polycrystalline silicon films were prepared by APCVD method. The factors that affect the boron-doped polycrystalline layer and their resistivity distribution were studied. A set of resistivity or deposition rate and temperature, flow rate and the change with the position parameter x Relationship lines.