据《Semiconductor World》Vol.20,№.9上报道,东芝公司发表了一种32M 的虚拟 SRAM(Pseudo SRAM,以下简称为 PSRAM),型号为 TC51W3216XB。该 PSRAM 是一种结构单元类似于 DRAM,与外部之间的接口结构又与 SRAM 相同的存储器,它即具有 DRAM 的高集成化、大容量化特点,又兼具 SRAM 的高速度、低功耗的优点。采用0.175μm CMOS 工艺,待机时的电流为70μA,数据存取时间达到80ns。现已有样品出售,从2001年8月份开始可月产10万个。另外,64M PSRAM 也正处于开发之中,预计9月份可出样品。 According to “Semiconductor World” Vol.20, No. 9, Toshiba has released a 32M virtual SRAM (Pseudo SRAM, hereinafter referred to as PSRAM) under the model TC51W3216XB. The PSRAM is a structure unit similar to DRAM, and the interface between the external structure and SRAM the same memory, which has the high integration of DRAM, large capacity, but also both the high-speed SRAM, low power consumption The advantages. 0.175μm CMOS technology, the standby current of 70μA, data access time of 80ns. Samples have now been sold, from August 2001 onwards to produce 100,000. In addition, 64M PSRAM is also under development, is expected to be out of samples in September.