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从GaAs/电解液界面的电化学研究,提出了一种适合于测定化合物半导体少子扩散长度的光电化学新方法──电化学光伏法,用它成功地测定了n-和p-GaAs体单晶及外延层的少子扩散长度。
Based on the electrochemical study of GaAs / electrolyte interface, a new photoelectrochemical method suitable for the determination of the diffusion length of minority carriers in compound semiconductors, an electrochemical photovoltaic (PV) method, was successfully developed for the determination of n- and p-GaAs bulk single crystals And the epitaxial layer of minority diffusion length.