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为了研究深亚微米工艺CCD的辐射效应特性,了解因器件特征尺寸变小引入的新效应,对0.18μm商用工艺线上流片的不同沟道宽长比的N型沟道MOSFET器件进行了60Co-γ射线辐照实验,这些NMOSFET与CCD内的MOSFET结构相同。分析了辐照后由于总剂量效应导致的NMOSFET参数退化情况以及参数的常温和高温退火行为。实验结果表明,深亚微米工艺器件的辐射耐受性相比大尺寸器件明显增强,不同沟道宽长比的器件表现出的总剂量效应差异显示了器件具有明显的窄沟效应,界面陷阱电荷在新型器件的总剂量效应中起主导作用。研究结果为大面阵CCD的辐射效应研究和辐射加固设计提供了理论支持。
In order to study the radiation effect characteristics of deep submicron process CCDs and to understand the new effect introduced by the device feature size reduction, the 60Co-type MOSFETs with different channel width-length ratios of 0.18μm commercial process line chips were studied. γ-ray irradiation experiments, these NMOSFET and CCD structure within the same MOSFET. The degradation of NMOSFET parameters due to the total dose effect after irradiation and the annealing behavior at room temperature and high temperature of the parameters were analyzed. The experimental results show that the radiation tolerance of deep submicron process devices is significantly enhanced compared to that of large size devices. The total dose effect difference of devices with different channel width-length ratios shows that the devices have a pronounced narrow-trench effect, and the interface trap charges Play a leading role in the total dose effect of new devices. The research results provide theoretical support for the radiation effect research and radiation reinforcement design of the large area array CCD.