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Based on conventional metal-oxide-semiconductor field-effect transistor (MOSFET),a novel kind of chemical field-effect transistor (ChemFET) gas sensor array has been designed and fabricated.The obtained sensor consists of self-assembly polyaniline (PAN) composite film containing poly(acrylic acid) (PAA) which was used as gate material of MOSFET instead of conventional metallic gate.The UV-Vis absorption spectra of PAN/PAA films were characterized.The NO_2 gas sensitive property of the ChemFET sensor array was also investigated.Results show that the drain current of devices increases with increasing of back-side voltage,and decreases with the increase of NO_2 concentration when the NO_2 concentration is below 20μg/g.The temperature dependence of ChemFET sensor array shows that the drain current of ChemFET sensor decreases with increasing of temperature.
A novel kind of chemical field-effect transistor (ChemFET) gas sensor array has been designed and fabricated. The resulting sensor consists of a self-assembled polyaniline (PAN) composite film containing poly (acrylic acid) (PAA) which was used as gate material of MOSFET instead of conventional metallic gate. UV-Vis absorption spectra of PAN / PAA films were characterized. NO 2 gas sensitive property of the ChemFET sensor array was also investigated. Results show that the drain current of devices increases with increasing back-side voltage, and with the increase of NO 2 concentration when the NO 2 concentration is below 20 μg / g. The temperature dependence of ChemFET sensor array shows that the drain current of ChemFET sensor decreases with increasing of temperature.