本文介绍了一种外延硅化物的新颖的晶体生长技术,即在超高真空条件下利用硅化物引导薄层(<60)来确定随后的外延硅化物的取向。采用这种方法可以在(Ⅲ)硅晶面上生长A型取向或是B型取向的NiSi_2单晶膜;可在(100)Si晶面生长连续的NiSi_2单晶膜,其界面平整,厚度均匀。使用更厚引导层,用相同工艺能在(Ⅲ)Si晶面生长CoSi_2厚膜。 This paper presents a novel crystal growth technique for epitaxial silicide by using a silicide guide thin layer (<60) to determine the orientation of the subsequent epitaxial silicide under ultra-high vacuum conditions. This method can grow type A orientation or type B orientation NiSi 2 single crystal film on the (Ⅲ) silicon crystal face; the continuous growth NiSi 2 single crystal film can be grown on the (100) Si crystal face, the interface is smooth and the thickness is uniform . Using a thicker guide layer, the CoSi2 thick film can be grown on the (III) Si crystal plane by the same process.