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将所设计的新结构半导体激光器──阶梯衬底内条形激光器推进到可见光波段(0.75—0.80μm)。器件直流阈值最低26mA,光功率线性15—20mW,2—4 I_(th)基模工作,4mW工作寿命已超过5000小时。本文还讨论分析了该结构器件可靠性改善的原因。
The new structure of the semiconductor laser designed ladder-type substrate lasers into the visible band (0.75-0.80μm). Device DC threshold minimum 26mA, optical power linear 15-20mW, 2-4I_ (th) base mode work, 4mW working life has more than 5000 hours. This article also discusses the reason why the reliability of the device is improved.