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使用PbMg1/ 3Nb2 / 3O3 PbTiO3 PbCd1/ 2 W1/ 2 O3三元系电容器瓷料 ,采用流延工艺成膜 ,丝网印刷内电极 ,在 930～ 950℃下低温烧结的方法制备了陶瓷衬底。陶瓷厚膜在室温下的相对介电常数εr>1.4× 10 4 ,损耗tanδ≈ 1% ,具有极高的品质因素 (大于等于 80 μC/cm2 )。理论分析了电致发光器件的阈值电压与绝缘介质特性的关系。直接在陶瓷厚膜上制备了MIS结构和MISIM结构的以陶瓷厚膜为绝缘层的ZnS :Mn低压驱动电致发光器件
A ceramic substrate was prepared by casting a film of a casting process, screen printing an internal electrode and sintering at a low temperature of 930~950 ° C. using a PbMg1 / 3Nb2 / 3O3 PbTiO3 PbCd1 / 2 W1 / 2 O3 ternary capacitor ceramic material. Ceramic thick film at room temperature relative dielectric constant εr> 1.4 × 10 4, loss tanδ ≈ 1%, with a very high quality factor (greater than equal to 80 μC / cm2). The relationship between threshold voltage and dielectric properties of electroluminescent devices is theoretically analyzed. The ZnS: Mn low-voltage driving electroluminescent device with MIS thick structure and MISIM structure with ceramic thick film as insulating layer was directly prepared on the ceramic thick film