离子敏场效应晶体管具有体积小、重量轻、响应快、输入阻抗高、输出阻抗低、可全固体化、易于实现多功能化等优点,受到国内外普遍重视,其研究工作已取得了显著进展。但推广应用中有不少困难,其原因在于目前器件尚未完善,除可靠性尚不够理想之外,温漂与滞后也严重地影响其稳定性。为加速ISFET实用化进程,深入研究其滞后特性,具有极其重要的现实意义。 研究工作表明,ISFET器件存在着较 Ion-sensitive field-effect transistor has the advantages of small size, light weight, fast response, high input impedance, low output impedance, full solidification, easy to realize multi-function, etc., and has been widely valued both at home and abroad. The research work has made remarkable progress . However, there are many difficulties in popularization and application. The reason is that devices are not perfect yet. In addition to the unsatisfactory reliability, the drift and lag also seriously affect their stability. In order to speed up the ISFET practicality process and study its hysteresis characteristics in depth, it has extremely important practical significance. Research shows that ISFET devices exist