许多先进的通信设备和传感设备将毫米波压控振荡器(VCOS)作为关键部件。最近,用CMOS技术制造出了上述器件。与-族化合物器件或SiGeHBT相比,CMOS器件的单位电流增益截止频率和最大振荡频率较低。因此,在设计毫米波CMOS VCO时,必须研究负阻单元的高频特性。其实,台湾大学和台湾半 Many advanced communications equipment and sensing devices have millimeter-wave voltage-controlled oscillators (VCOS) as a key component. Recently, CMOS devices have been fabricated. CMOS device unit current gain cutoff frequency and the maximum oscillation frequency is lower than that of the family compound device or the SiGeHBT. Therefore, when designing a millimeter-wave CMOS VCO, the high-frequency characteristics of the negative resistance cell must be studied. In fact, Taiwan University and Taiwan are half