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采用开管式Al乳胶源涂布与气相Ga相结合的技术,实现了镓铝双质在n型Si中的均匀掺杂,得到了p型半导体.研究了镓铝双质掺杂的方法及其与器件性能的关系,并讨论了机理.利用扩展电阻法、四探针和晶闸管测试仪等手段,测试了镓铝扩散Si片的杂质分布规律、薄层电阻RS及快速晶闸管的多项参数.利用该技术制造的快速晶闸管的关断时间toff为31.2—38.6μs,开通时间ton为4.6—5.9μs,通态峰值压降VTM为1.9—2.1V.实验和试用表明,该掺杂技术能明显提高器件的综合性能、电参数一致性和成品率,为制造快速晶闸管提供了一种可行的受主双质掺杂新工艺.
The technology of open-tube Al latex coating and gas-phase Ga bonding was used to realize the uniform doping of gallium-aluminum-aluminum double substance in n-type Si and the p-type semiconductor was obtained.The doping method of gallium-aluminum- Its relationship with the performance of the device, and discusses the mechanism.The impurity distribution of gallium-aluminum-diffused Si wafers, the parameters of the sheet resistance RS and the fast thyristor are tested by means of extended resistance method, four-probe and thyristor tester, The turn-off time toff of the fast thyristor manufactured by this technique is 31.2-38.6μs, the turn-on time ton is 4.6-5.9μs, and the on-state peak voltage drop VTM is 1.9-2.1V. Experiments and tests show that this doping technique can It obviously improves the overall performance of the device, the consistency of the electrical parameters and the yield of the thyristor. It provides a feasible acceptor doping process for the manufacture of fast thyristor.