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报道了我们研制出的132元InSb光伏线列的制备工艺及其性能。线列是采用流行的Cd扩散工艺和光刻剥离技术制成的,每个线列装于封离的检测杜瓦瓶中,77K,线列典型检测元的探测率D~*(500,1000,1)为(0.8~1.5)×10~(10)cm·Hz~(1/2)/W。
Reported that we have developed 132 yuan InSb photovoltaic line preparation process and performance. The line array is made using the popular Cd diffusion process and photolithography stripping technology. Each line array is mounted in a sealed Dewah bottle, with a detection rate of D * * (500, 1000 , 1) is (0.8 ~ 1.5) × 10 ~ (10) cm · Hz ~ (1/2) / W.