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GD非晶硅中氧的掺杂对材料的光电特性有重要的影响。我们测量了a-Si:H和a-Si:H:O的光学带隙和光电导光谱响应,发现掺氧将会使光学带隙有所增加。光电导光谱响应测量表明,掺氧后的非晶硅,较之同样条件下未掺氧的样品,光电导光谱响应的峰值更加接近太阳光谱的峰值,光电导光谱响应半宽度有所增加。此外,在长波限以外,当所用光子能量大于E_B—E_F时,仍测得了微弱的光电导,这可能与带隙态中低于E_F的局域态有关。
The doping of oxygen in GD amorphous silicon has an important influence on the photoelectric properties of the material. We measured the optical bandgap and photoconductive spectral response of a-Si: H and a-Si: H: O and found that the oxygen bandgap will increase the optical bandgap. The results of photoconductive spectral response show that the peak of photoconductive spectral response is closer to the peak of solar spectrum than that of non-doped amorphous silicon under oxygen-doped conditions, and the half width of photoconductive spectrum is increased. In addition, beyond the long-wavelength limit, weak photoconductivity is still detected when the photon energy used is greater than E_B-E_F, which may be related to the local state below E_F in the band gap.