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通过溶胶-凝胶和真空热处理工艺在石英基底上制备出不同掺Mo量的二氧化钒薄膜。对薄膜进行了X射线衍射及热分析,并测试了其电阻及7.5~14μm波段红外热图随温度的变化,研究了Mo掺杂对二氧化钒薄膜热致变色性能的影响。结果表明,Mo进入VO2晶格,替换了部分V的位置;随着掺Mo量的不断增加,相变温度不断降低,但电阻突变量级比未掺杂时有所减小;掺Mo量(MoO3:V2O5,下同)为5%时,相变温度可降至45℃左右;红外热图分析表明,Mo掺杂VO2薄膜的7.5~14μm波段发射率可在较低温度下突变降低,薄膜在温度增加时可在较低温度水平上主动控制自身辐射强度、降低其辐射温度。
Vanadium dioxide films doped with different amounts of Mo were prepared on quartz substrates by sol-gel and vacuum heat treatment. The films were characterized by X-ray diffraction and thermal analysis, and their resistances and the thermograms of 7.5-14μm band were tested. The effects of Mo doping on the thermochromic properties of vanadium dioxide films were investigated. The results show that Mo enters the lattice of VO2 and replaces the position of the part V. With the increasing of the amount of Mo, the phase transition temperature decreases continuously, but the order of the resistance mutation is smaller than that of undoped. MoO3: V2O5, the same below) is 5%, the phase transition temperature can be reduced to about 45 ℃. The infrared thermal image analysis shows that the emissivity of Mo doped VO2 thin films decreases at lower temperature, When the temperature increases at a lower temperature level of active control of their own radiation intensity, reduce its radiation temperature.