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High-performance Al Ga N/Ga N high electron mobility transistors(HEMTs) grown on silicon substrates by metal–organic chemical-vapor deposition(MOCVD) with a selective non-planar n-type Ga N source/drain(S/D) regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 ?·mm and a comprehensive transconductance(gm) of 247 m S/mm. The current gain cutoff frequency f T and maximum oscillation frequency f MAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard Ga N HEMT on silicon substrate, the fTand fMAXis 50% and 52% higher, respectively.
High-performance Al Ga N / Ga N high electron mobility transistors (HEMTs) grown on silicon substrates by metal-organic chemical-vapor deposition (MOCVD) with a selective non-planar n-type Ga N source / drain A device exhibited a non-alloyed Ohmic contact resistance of 0.209 · · mm and a comprehensive transconductance (gm) of 247 m S / mm. The current gain cutoff frequency f T and the maximum oscillation frequency f MAX of 100-nm HEMT with S / D regrowth were measured to be 65 GHz and 69 GHz. Compared to those of the standard Ga N HEMT on silicon substrate, the fTand fMAXis 50% and 52% higher, respectively.