By using the plasma enhanced chemical vapor deposition (PECVD) technique, amorphous silicon oxide films con-taining nanocrystalline silicon grain (nc-SiOx:H) are deposited, and the bonding configurations and optical absorption properties of the films are investigated. The grain size can be well controlled by varying the hydrogen and oxygen content, and the largest size is obtained when the hydrogen dilution ratio R is 33. The results show that the crystallinity and the grain size of the film first increased and then decreased as R increased. The highest degree of crystallinity is obtained at R=30. The analyses of bonding characteristics and light absorption characteristics show that the incorporation of hydrogen leads to an increase of overall bonding oxygen content in the film, and the film porosity first increases and then decreases. When R=30, the film can be more compact, the optical absorption edge of the film is blue shifted, and the film has a lower activation energy.