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用磁控溅射方法制备了两个具有不同Fe层厚度的 [Ni80 Co2 0 (L) /Fe(tFe) ]N 多层膜系列样品 ,其中tFe=0 1和 2nm .研究了两个系列样品的磁及输运性质随Ni80 Co2 0 层厚度L的变化关系 .在退火态 [Ni80 Co2 0 (L) /Fe(0 1nm) ]N 系列样品中 ,发现各向异性磁电阻 (AMR)和横向磁电阻 (TMR)在L为 10nm附近存在一较宽的增强峰 ,其峰位与制备态 [Ni80 Co2 0 (L) /Fe(2nm) ]2 5多层膜TMR的增强峰位一致 .当L小于Ni80 Co2 0 合金的电子平均自由程时 ,制备态 [Ni80 Co2 0 (L) /Fe(0 1nm) ]N 样品的各向异性磁电阻 (Δρ)和零场电阻率 ρ都随L的减小而增加 ,且ρ的增量超过Δρ的增量 .ρ随L的依赖关系可采用Fuchs Sondheimer理论描述 .在L小于 10nm时 ,制备态界面掺杂 [Ni80 Co2 0 (L) /Fe(0 1nm) ]N 系列样品的矫顽力Hc 随L近似直线上升 ,在L大于 10nm后趋于饱和 .退火后Hc显著下降 .实验结果表明 ,在多层膜结构中 ,界面散射可导致 ρ和Δρ的增强 ;磁性合金界面层还可导致畴结构的改变及TMR和AMR的增强 .
Two samples of [Ni80Co20 (L) / Fe (tFe)] N multilayers with different Fe layer thicknesses were prepared by magnetron sputtering, where tFe = 0 1 and 2 nm. Two series of samples The magnetic and transport properties vary with the thickness L of Ni80 Co2 layer 0. In the annealed Ni80 Co20 (L) / Fe (0 1 nm)] N series samples, anisotropic magnetoresistance (AMR) and lateral The magnetoresistance (TMR) has a wide enhancement peak at a wavelength of 10 nm, and its peak position is consistent with the enhanced peak position of the TMR of the as-prepared [Ni80Co20 (L) / Fe (2nm)] 2 5 multilayer film. L is less than that of Ni80Co20 alloy, the anisotropy magnetoresistance (Δρ) and zero-field resistivity ρ of the Ni80Co20 (L) / Fe (001nm) Decreases and increases, and the increment of ρ exceeds the increase of Δρ. The dependence of ρ with L can be described by the Fuchs Sondheimer theory. When L is less than 10 nm, the interface of the prepared state [Ni80Co20 (L) / Fe ( 0 1nm)] The coercivity Hc of N series samples increases linearly with L, and becomes saturated after L is larger than 10nm. The Hc decreases remarkably after annealed.The experimental results show that in the multi-layered structure, the interface scattering can lead to ρ and Δρ enhancement; magnetic alloy interface layer can also lead to the change of domain structure and TMR and AMR enhancement.